Journal
JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES
Volume 35, Issue 1, Pages 63-80Publisher
SPRINGER
DOI: 10.1007/s10762-013-0047-7
Keywords
Terahertz emitters and detectors; Silicon CMOS circuits; Heterodyne detection; Terahertz imaging
Funding
- Alexander von Humboldt Foundation
- German-Israeli Foundation [1173/2011]
- grant Sensors Toward Terahertz within the LOEWE platform [1502-2995-11]
- Lithuanian Science Foundation [VP1-3.1-SMM-07-K-03-040]
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We summarize three lines of development and investigation of foundry-processed patch-antenna-coupled Si MOSFETs as detectors of THz radiation: (i) Exploiting the pinciple of plasma-waved-based mixing in the two-dimensional electron gas of the transistors' channels, we demonstrate efficient detection at frequencies as high as 9 THz, much above the transit-time-limited cut-off frequencies of the devices (tens of GHz). Real-time imaging at 600 GHz with a 12x12 detector array is explored. (ii) Given the limited THz power usually available for applications, we explore imaging with enhanced sensitivity in heterodyne mode. We show that real-time operation of a 100x100-pixel heterodyne camera should be possible at 600 GHz with a better dynamic range (30 dB) than for direct power detection (20 dB), even if only a quarter-milliwatt of local-oscillator power, distributed radiatively over all detector pixels, is available. (iii) Finally, we present an all-electronic raster-scan imaging system for 220 GHz entirely based on CMOS devices, combining the CMOS detectors with an emitter circuit implemented in a 90-nm CMOS process and delivering radiation with a power on the 100-mu W scale. Considering progress in the field, we anticipate that the emitter concept of oscillator-based power generation with on-chip frequency multiplication will carry well into the sub-millimeter-wave regime.
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