Journal
ORGANIC ELECTRONICS
Volume 24, Issue -, Pages 170-175Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.orgel.2015.05.038
Keywords
Patterning; Area-selective growth; Organic transistors; Dip-coating
Funding
- National Natural Science Foundation of China [91227201, 11304213]
- China Postdoctoral Science Foundation [2014M550304]
- Suzhou Industrial Park
- Collaborative Innovation Center of Suzhou Nano Science Technology
- China Scholarship Council
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Oriented organic field-effect transistor (OFET) stripe arrays on hydrophobic substrates were fabricated by fast dip-coating technique. The addressable growth was achieved by decreasing surface energy of the channel areas with respect to the electrodes via hydrophobic treatment. The higher surface energy of the electrodes allows solution to adhere and then organic semiconductors nucleate and bridge the channels after evaporation of the solvent. Area-selective behaviour can be controlled by adjusting surface property of transistor channel, geometry features of the gold electrodes, pulling speed and evaporation atmosphere. The mechanism behind is the competition between receding of the solution and evaporating of the solvent that generate the organic semiconductor films on the substrate. The patterned bottom-contact transistor arrays exhibit carrier mobility of 2.0 x 10(-3) cm(2) V-1 s(-1), while no field-effect characteristics can be detected for bottom-contact arrays without hydrophobic treatment. Such reliable, fast and solution-based patterned OFET arrays are highly desirable for large-scale and low-cost production. (C) 2015 Elsevier B.V. All rights reserved.
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