Rectifying behavior and negative differential resistance in triangular graphene p-n junctions induced by vertex B-N mixture doping

We investigate the electronic transport properties of triangular graphene systems with atoms B, N or both of them vertex doped based on non-equilibrium Green's function approach combined with density functional theory. Interestingly, fine rectifying behavior and obvious negative differential resistance are observed in B-N vertex doped case. The origin of the rectification is that a barrier likes a p-n junction has been formed in B-N vertex doped junction. Moreover, weak interaction is considered by adjusting the distance between the two intermediate atoms. With the increase of the distance between them, the rectifying behavior and negative differential resistance weaken step by step. Our structure constructed by B-N vertex doped triangular graphene to realize fine rectification is constructive and is a promising candidate for the next generation nanoscale device. (C) 2015 Elsevier B.V. All rights reserved.