Journal
ORGANIC ELECTRONICS
Volume 18, Issue -, Pages 17-23Publisher
ELSEVIER
DOI: 10.1016/j.orgel.2015.01.001
Keywords
Organic memories; Resistive switching; Metal nanoparticles; Filamentary conduction
Funding
- FP7-NMP-SMALL-4 program [263073 (HYMEC)]
- Polish Ministry of Science and Higher Education
Ask authors/readers for more resources
A non-volatile memory element based on organic/inorganic nanocomposites is presented. The device can be operated in ambient conditions, showing high retention time and long-term life time. The formation/rupture of metallic filaments in the organic matrix is investigated by HR-XPS and ToF-SIMS analysis, and is demonstrated to be the driving mechanism for the resistive switching. (C) 2015 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
