Journal
OPTIK
Volume 126, Issue 20, Pages 2260-2263Publisher
ELSEVIER GMBH
DOI: 10.1016/j.ijleo.2015.05.121
Keywords
NiO; GaN; Magnetron sputtering; Ultraviolet lasers
Categories
Funding
- 973 program [2011CB302005]
- National Natural Science Foundation of China [11404097, 11304112, 60976010]
- Science and Technology Development Project in Jilin Province [20150520092JH]
- China Postdoctoral Science Foundation [2013M541301]
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Electrically pumped random lasing has been realized from a p-NiO/n-GaN heterojunction diode. The highly disorderd p-NiO layer, deposited on the commercially available n-GaN substrate by radio frequency magnetron sputtering, supplies multiple optical scattering to sustain coherent optical feedback. The n-GaN layer provides optical amplification to the scattered light propagating inside the heterojunction. Under injection currents larger than 11 mA, a prominent lasing action was discovered with lasing peaks of line width less than 0.6 nm at round 361 nm. The lasing action exhibits the characteristics of random lasing. Furthermore, the mechanism of the light emission was discussed in terms of the band diagrams of the heterojunction in detail. (C) 2015 Elsevier GmbH. All rights reserved.
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