4.6 Article

Internal gain in Er-doped As2S3 chalcogenide planar waveguides

Journal

OPTICS LETTERS
Volume 40, Issue 5, Pages 796-799

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OL.40.000796

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Funding

  1. Australian Research Council Centre of Excellence for Ultrahigh bandwidth Devices for Optical Systems, CUDOS [CE110001018]

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Low-loss erbium-doped As2S3 planar waveguides are fabricated by cothermal evaporation and plasma etching. Internal gain in the telecommunications band is demonstrated for the first time in any chalcogenide glass and additionally in a thin film planar waveguide amplifier configuration. (C) 2015 Optical Society of America.

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