Journal
OPTICS LETTERS
Volume 40, Issue 21, Pages 4859-4862Publisher
OPTICAL SOC AMER
DOI: 10.1364/OL.40.004859
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Funding
- Ministry of Science, ICT and Future Planning of Korea (Global Frontier Project) [CISS-2012M3A6A6054191]
- National Research Foundation of Korea [2012M3A6A6054191] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We demonstrate a new type of silicon total-internal-reflection optical switch with a simple pn junction functioning both as a reflector and a heater. The reflector is placed between asymmetrically y-branched multimode waveguides with an inclination angle corresponding to half of the branch angle. When the reflector is at rest, incident light is reflected in accordance to the refractive index difference due to the plasma dispersion effect of the pre-doped carriers. Switching to the transmission state is attained under a reverse breakdown of the pn junction by the thermo-optic effect which smears the refractive index difference. From this switching scheme, we confirmed the switching operation with a shallow total-internal-reflection region of 1 mu m width. At a 6 degrees branch angle, an extinction ratio of 12 dB and an insertion loss of -4.2 dB are achieved along with a thermal heating power of 151.5 mW. (C) 2015 Optical Society of America
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