4.6 Article

Topological insulator Bi2Se3 based Q-switched Nd:LiYF4 nanosecond laser at 1313 nm

Journal

OPTICS EXPRESS
Volume 23, Issue 6, Pages 7674-7680

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OE.23.007674

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Funding

  1. National Natural Science Foundation of China [61275050, 61475129]
  2. Specialized Research Fund for the Doctoral Program of Higher Education [20120121110034, 20130121120043]
  3. Fundamental Research Funds for the Central Universities [2013121022]
  4. Natural Science Foundation of Fujian Province of China [2014J01251]
  5. Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry

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We report on a1.3 mu m Q-switched laser operation based on LD-end-pumped Nd:LiYF4 (YLF) crystal firstly using few-layer topological insulator (TI) Bi2Se3 as saturable absorber (SA). The TI Bi2Se3 SA is fabricated by transferring the liquid-phase-exfoliated Bi(2)Se(3)nanosheets onto a BK7 glass substrate. After a free-running laser operation, the TI Bi2Se3 SA is inserted into the concave-plano laser cavity and finally a stable Q-switched laser operation is achieved with a maximum average output power of close to 0.2 W corresponding to a pulse repetition rate of 161.3 kHz, a shortest pulse width of 433 ns and a pulse energy of about 1.23 mu J. The results experimentally extend the promising application of the 2D material, few-layer TI Bi2Se3, in solid state lasers (SSLs). (C) 2015 Optical Society of America

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