Journal
OPTICS EXPRESS
Volume 23, Issue 18, Pages 23526-23550Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.23.023526
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Funding
- European Research Council (ERC) [279770]
- European Union [293767, 619591]
- German Ministry for Research and Education (BMBF) [16BP12504]
- European Research Council (ERC) [279770] Funding Source: European Research Council (ERC)
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We report on the design of Silicon Mach-Zehnder carrier depletion modulators relying on epitaxially grown vertical junction diodes. Unprecedented spatial control over doping profiles resulting from combining local ion implantation with epitaxial overgrowth enables highly linear phase shifters with high modulation efficiency and comparatively low insertion losses. A high average phase shifter efficiency of V pi L = 0.74 Vu cm is reached between 0 V and 2 V reverse bias, while maintaining optical losses at 4.2 dB/mm and the intrinsic RC cutoff frequency at 48 GHz (both at 1 V reverse bias). The fabrication process, the sensitivity to fabrication tolerances, the phase shifter performance and examples of lumped element and travelling wave modulators are modeled in detail. Device linearity is shown to be sufficient to support complex modulation formats such as 16-QAM. (C) 2015 Optical Society of America
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