Journal
OPTICS EXPRESS
Volume 23, Issue 25, Pages 32035-32043Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.23.032035
Keywords
-
Categories
Funding
- Presidential Early Career Award for Scientists and Engineers [N00014-14-1-0573, W911NF-09-1-0434]
- NSF CAREER Award [N00014-11-1-0096]
- ONR Young Investigator Award [N00014-12-1-0947]
- ARO Young Investigator Award [W911NF-12-1-0253]
- Directorate For Engineering [1054454, 1305931] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys [1305931, 1054454] Funding Source: National Science Foundation
Ask authors/readers for more resources
We present a comprehensive analysis of terahertz radiation from large area plasmonic photoconductive emitters in relation with characteristics of device substrate. Specifically, we investigate the radiation properties of large area plasmonic photoconductive emitters fabricated on GaAs substrates that exhibit short carrier lifetimes through low-temperature substrate growth and through epitaxially embedded rare-earth arsenide (ErAs and LuAs) nanoparticles in superlattice structures. Our analysis indicates that the utilized substrate composition and growth process for achieving short carrier lifetimes are crucial in determining substrate resistivity, carrier drift velocity, and carrier lifetime, which directly impact optical-to-terahertz conversion efficiency, radiation power, radiation bandwidth, and reliability of large area plasmonic photoconductive emitters. (C) 2015 Optical Society of America
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
