Journal
OPTICS EXPRESS
Volume 23, Issue 4, Pages 4839-4846Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.23.004839
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Funding
- Research Grants Council (RGC) of Hong Kong [GRF 526511/PolyU B-Q26E]
- PolyU internal research grants [G-YL06, G-YN06]
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A simple methyl-terminated (-CH3) surface passivation approach has been employed to enhance the performance of the bilayer graphene/Si nanohole array (BLG/SiNH array) Schottky junction based self-powered near infrared photodetector (SPNIRPD). The as-fabricated SPNIRPD exhibits high sensitivity to light at near infrared region at zero bias voltage. The I-light/I-dark ratio measured is 1.43 x 10(7), which is more than an order of magnitude improvement compared with the sample without passivation (similar to 6.4 x 10(5)). Its corresponding responsivity and detectivity are 0.328 AW(-1) and 6.03 x 10(13) cmHz(1/2)W(-1), respectively. The demonstrated results have confirmed the high-performance SPNIRPD compared with the photo-detectors of similar type and its great potential application in future optoelectronic devices. (C) 2015 Optical Society of America
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