4.6 Article

Ge microdisk with lithographically-tunable strain using CMOS-compatible process

Journal

OPTICS EXPRESS
Volume 23, Issue 26, Pages 33249-33254

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OE.23.033249

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Funding

  1. Office of Naval Research through APIC Corporation [N00421-03-9-0002]
  2. Stanford Graduate Fellowship
  3. INHA UNIVERSITY Research Grant
  4. Pioneer Research Center Program through the National Research Foundation of Korea - Ministry of Science, ICT & Future Planning [2014M3C1A3052580]
  5. National Research Foundation of Korea [2014M3C1A3052580] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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We present germanium microdisk optical resonators under a large biaxial tensile strain using a CMOS-compatible fabrication process. Biaxial tensile strain of similar to 0.7% is achieved by means of a stress concentration technique that allows the strain level to be customized by carefully selecting certain lithographic dimensions. The partial strain relaxation at the edges of a patterned germanium microdisk is compensated by depositing compressively stressed silicon nitride layer. Two-dimensional Raman spectroscopy measurements along with finite-element method simulations confirm a relatively homogeneous strain distribution within the final microdisk structure. Photoluminescence results show clear optical resonances due to whispering gallery modes which are in good agreement with finite-difference time-domain optical simulations. Our bandgap-customizable microdisks present a new route towards an efficient germanium light source for on-chip optical interconnects. (C) 2015 Optical Society of America

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