Journal
OPTICS EXPRESS
Volume 23, Issue 19, Pages A1081-A1086Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.23.0A1081
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Funding
- National Nuclear and Radiation Technology R&D program through the National Research Foundation of Korea (NRF) [2013M2A2A6043608]
- Ministry of Science, ICT, and Future Planning
- National Research Foundation of Korea [2013M2A2A6043608] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We demonstrate the self-aligned growth of CdTe photodetectors using graphene as a pre-defined seed layer. Defects were generated in the graphene prior to growth to act as CdTe nucleation sites. Self-aligned CdTe structures were grown selectively on the pre-defined graphene region. The electrical and optoelectrical properties of the photodetectors were systematically analyzed. Our CdTe devices displayed Ohmic behavior with a low sheet resistance of 1.24 x 10(8) Omega/sq. Excellent photodetecting performances were achieved, including a high on-off ratio (similar to 2.8), fast response time (10.4 s), and highly reproducible photoresponses. The fabrication method proposed here for these self-aligned device structures proves valuable for the development of next-generation graphene-semiconductor hybrid devices. (C) 2015 Optical Society of America
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