Journal
OPTICS EXPRESS
Volume 23, Issue 13, Pages 16740-16749Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.23.016740
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Funding
- Office of Naval Research through APIC Corporation [N00421-03-9-0002]
- Stanford Graduate Fellowship
- INHA UNIVERSITY Research Grant
- National Research Foundation of Korea - Ministry of Science, ICT & Future Planning [2014M3C1A3052580]
- National Research Foundation of Korea [2014M3C1A3052580] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial tensile strain to germanium has been a challenge. We present a simple, CMOS-compatible technique to conveniently induce a large, spatially homogenous strain in circular structures patterned within germanium nanomembranes. Our technique works by concentrating and amplifying a pre-existing small strain into a circular region. Biaxial tensile strains as large as 1.11% are observed by Raman spectroscopy and are further confirmed by photoluminescence measurements, which show enhanced and redshifted light emission from the strained germanium. Our technique allows the amount of biaxial strain to be customized lithographically, allowing the bandgaps of different germanium structures to be independently customized in a single mask process. (C) 2015 Optical Society of America
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