Journal
OPTICAL ENGINEERING
Volume 54, Issue 5, Pages -Publisher
SPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS
DOI: 10.1117/1.OE.54.5.057104
Keywords
micro-optical devices; optoelectronics; silicon; p-n junction
Categories
Funding
- California Institute for Telecommunications and Information Technology in the United States
- Fundamental Research Funds for the Central Universities [ZYGX2015KYQD009]
- Ministry of Education, China
- 1000-Talents Program of Sichuan Province, China
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A study of a silicon metal oxide semiconductor (MOS)-type light-emitting device (LED) in which the p-n junction works under a reverse bias and the gate voltage is applied to modulate the electric field distribution from the p(+) region through the n region. The use of gate voltage could result in the generation of a field-induced junction which leads to a decrease of the operating voltage of the LED compared to the two terminal p-n junction LED. The dynamics of the photonic emission in the structure and its related response time, and then a more detailed theoretical and simulation understanding of the photonic emission is achieved, which definitively demonstrates the capability of the device in which a reverse-bias region showing light modulation with multi-GHz bandwidth and gigabit-per-second data rate at near-infrared wavelength. Although the emitted optical power is weak, it is advantageous to utilize the device in all-silicon optoelectronic integrated circuits, especially for shortdistance on-chip optical interconnects achieved by standard complementary MOS technology. (C) 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
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