4.4 Article

Voltage-Gated Metal-Enhanced Fluorescence II: Effects of Fluorophore Concentration on the Magnitude of the Gated-Current

Journal

JOURNAL OF FLUORESCENCE
Volume 19, Issue 2, Pages 369-374

Publisher

SPRINGER/PLENUM PUBLISHERS
DOI: 10.1007/s10895-009-0460-4

Keywords

Metal-Enhanced fluorescence; Surface-Enhanced fluorescence; Radiative decay engineering; Plasmon controlled fluorescence; Surface plasmons; Mirror dipole; Near-Field effects; Voltage-gated fluorescence

Funding

  1. IoF
  2. MBC
  3. UMBI

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In this letter we report further findings on the ability of an applied direct current to modulate Metal-Enhanced Fluorescence (MEF). Fluorophores in close-proximity to just-continuous silver films (JCS) show significantly enhanced fluorescence intensities. However, when a current is applied to the films, the enhanced fluorescence can be gated in a manner that depends on both the fluorophore concentration, the magnitude of the applied current and the extent of the protein mono to multi-layer surface coverage. Our results are consistent and indeed further support our previous hypothesis and model that fluorophore-metal near-field interactions can be influenced by an applied direct current.

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