Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 43, Issue 9, Pages 3270-3275Publisher
SPRINGER
DOI: 10.1007/s11664-014-3268-1
Keywords
Photodiode; ZnO nanoparticles; illumination; rectification ratio
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Funding
- National Natural Science Foundation of China [11304192]
- Natural Science Foundation of the Education Bureau of Shaanxi Province, China [2013JK1113]
- Scientific Research Foundation of Shaanxi University of Technology [SLGQD13-9]
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We fabricated photodiodes based on planar heterojunctions of zinc oxide (ZnO) nanoparticles (NPs,similar to 5 nm) and pentacene. The current density-voltage (J-V) characteristics of the photodiodes were investigated in the dark and under illumination. The photodiodes had good rectifying behavior in the dark and under illumination. A high rectification ratio (RR) of 878 at +/- 1.75 V and a low turn-on voltage of 1.3 V were achieved in the dark. Under 100 mW/cm(2) illumination, an RR of 55.3 was obtained at +/- 1.90 V. Furthermore, the photoresponsive mechanism of the device was explained in terms of the schematic band diagram and the transport of charge carriers in the device.
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