4.5 Article

Effects of Heat-Treatment Temperature on the Microstructure, Electrical and Dielectric Properties of M-Type Hexaferrites

Journal

JOURNAL OF ELECTRONIC MATERIALS
Volume 43, Issue 2, Pages 512-521

Publisher

SPRINGER
DOI: 10.1007/s11664-013-2900-9

Keywords

Hexaferrites; microstructure; heat treatment; dielectric properties

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M-type hexaferrite BaCr (x) Ga (x) Fe12-2x O-19 (x = 0.2) powders have been synthesized by use of a sol-gel autocombustion method. The powder samples were pressed into 12-mm-diameter pellets by cold isostatic pressing at 2000 bar then heat treated at 700A degrees C, 800A degrees C, 900A degrees C, and 1000A degrees C. X-ray diffraction patterns of the powder sample heat treated at 1000A degrees C confirmed formation of the pure M-type hexaferrite phase. The electrical resistivity at room temperature was significantly enhanced by increasing the temperature of heat treatment and approached 5.84 x 10(9) Omega cm for the sample heat treated at 1000A degrees C. Dielectric constant and dielectric loss tangent decreased whereas conductivity increased with increasing applied field frequency in the range 1 MHz-3 GHz. The dielectric properties and ac conductivity were explained on the basis of space charge polarization in accordance with the Maxwell-Wagner two-layer model and Koop's phenomenological theory. The single-phase synthesized materials may be useful for high-frequency applications, for example reduction of eddy current losses and radar absorbing waves.

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