Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 42, Issue 7, Pages 1956-1959Publisher
SPRINGER
DOI: 10.1007/s11664-013-2482-6
Keywords
Magnesium silicide; aluminum; thermoelectricity
Categories
Funding
- Italian National Research Council
- Italian Ministry of Economic Development Agreement Ricerca di sistema elettrico nazionale
- Swedish Foundation for Strategic Research (SSF)
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Magnesium silicide (Mg2Si)-based alloys are promising candidates for thermoelectric (TE) energy conversion for the middle to high range of temperature. These materials are very attractive for TE research because of the abundance of their constituent elements in the Earth's crust. Mg2Si could replace lead-based TE materials, due to its low cost, nontoxicity, and low density. In this work, the role of aluminum doping (Mg2Si:Al = 1:x for x = 0.005, 0.01, 0.02, and 0.04 molar ratio) in dense Mg2Si materials was investigated. The synthesis process was performed by planetary milling under inert atmosphere starting from commercial Mg2Si pieces and Al powder. After ball milling, the samples were sintered by means of spark plasma sintering to density > 95%. The morphology, composition, and crystal structure of the samples were characterized by field-emission scanning electron microscopy, energy-dispersive spectroscopy, and x-ray diffraction analyses. Moreover, Seebeck coefficient analyses, as well as electrical and thermal conductivity measurements were performed for all samples up to 600A degrees C. The resultant estimated ZT values are comparable to those reported in the literature for these materials. In particular, the maximum ZT achieved was 0.50 for the x = 0.01 Al-doped sample at 600A degrees C.
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