Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 42, Issue 8, Pages 2470-2477Publisher
SPRINGER
DOI: 10.1007/s11664-013-2618-8
Keywords
Amorphous oxide semiconductor; hafnium-zinc-tin oxide ZnO-based TFT; negative-bias temperature instability (NBTI)
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Funding
- National Research Foundation of Korea (NRF)
- Korea Government (MEST) [2012-3001641]
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The influence of hafnium (Hf) doping on negative-bias temperature instability in zinc-tin oxide thin-film transistors was studied. Hafnium-zinc-tin oxide TFTs exhibited a turn-on voltage (V (ON)) that shifted from 0 V to -1 V with negligible changes in the subthreshold swing and field-effect mobility after 3 h of total stresses. The enhanced improvement of the V (ON) shift (Delta V (ON)) was attributed to the reduction in the interface trap density, which may result from the suppression of oxygen-vacancy-related defects by the Hf ions.
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