Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 43, Issue 4, Pages 909-913Publisher
SPRINGER
DOI: 10.1007/s11664-013-2890-7
Keywords
TI; MBE; Bi2Se3
Categories
Funding
- NSF [DMR1122594]
- NSF CREST Center (CENSES)
- Division Of Human Resource Development
- Direct For Education and Human Resources [0833180] Funding Source: National Science Foundation
Ask authors/readers for more resources
Growth of high-quality Bi2Se3 films is crucial not only for study of topological insulators but also for manufacture of technologically important materials. We report a study of the heteroepitaxy of single-crystal Bi2Se3 thin films grown on GaAs and InP substrates by use of molecular beam epitaxy. Surface topography, crystal structure, and electrical transport properties of these Bi2Se3 epitaxial films are indicative of highly c-axis oriented films with atomically sharp interfaces.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
