Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 42, Issue 3, Pages 359-365Publisher
SPRINGER
DOI: 10.1007/s11664-012-2345-6
Keywords
Diffusion soldering; GeTe(Pb) thermoelectric modules; intermetallic compounds; bonding strength
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Funding
- National Science Council, Taiwan [NSC-99-2221-E002-052]
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Directly coating a GeTe(Pb) thermoelectric device with a Ni barrier layer and an Ag reaction layer and then diffusion soldering with a Cu electrode coated with Ag and Sn leads to breakage at the GeTe(Pb)/Ni interface and low bonding strengths of about 6 MPa. An improved process, precoating with 1 mu m Sn film and heating at 250A degrees C for 3 min before electroplating with Ni and Ag layers, results in satisfactory bonding strengths ranging from 12.6 MPa to 19.1 MPa. The precoated Sn film leads to the formation of a (Ni,Ge)(3)Sn-4 layer between the GeTe(Pb) thermoelectric material and Ni barrier layer, reducing the thermal stress at the GeTe(Pb)/Ni interface.
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