Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 42, Issue 3, Pages 398-402Publisher
SPRINGER
DOI: 10.1007/s11664-012-2348-3
Keywords
Thin-film transistor; TiO2 channel layer; structural properties; electrical characteristics
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Funding
- Converging Research Center Program through the National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology [2012K001286]
- Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology (MEST) [2012-00109]
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Thin-film transistors (TFTs) utilizing TiO2 channel layers were fabricated by using a solution process. Atomic force microscopy images showed that the surface morphology of the TiO2 films became uniform due to the ultraviolet (UV)/ozone treatment. X-ray photoelectron spectroscopy showed that the UV/ozone treatment reduced the amount of oxygen deficiency in the TiO2 films, resulting in a decrease of the electron concentration on the surface. The performance of the TFT devices was significantly improved due to a decrease of the off-current level resulting from the enhanced uniformity and the decrease of the trap level resulting from the UV/ozone treatment.
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