Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 40, Issue 5, Pages 769-772Publisher
SPRINGER
DOI: 10.1007/s11664-011-1567-3
Keywords
Clathrate; electronic structure; x-ray photoelectron spectroscopy
Categories
Funding
- Ministry of Education, Culture, Sports, Science, and Technology of Japan [18204030, 19014001, 18651075, 18204032]
- Ministry of Education, China [NCET-10-0571]
- Grants-in-Aid for Scientific Research [19014001, 18204030, 18651075] Funding Source: KAKEN
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The electronic states of p- and n-type Ba8Ga16Ge30 (BGG) are studied by high-resolution x-ray photoelectron spectroscopy. In BGG, three bands are resolved in the valence band region. Theoretical calculations show that the three band structures in the valence band are mainly constructed by the Ge/Ga 4s and 4p wavefunctions with little contribution from Ba 5s, 5p, and 5d. The valence band around the Fermi level region of n-type BGG is sensitive to temperature, while that of p-BGG is stable when the temperature changes. The data indicate that the endohedral Ba in p- and n-type BGG rattle with different modes due to the different hybridization with the orbitals of the framework polyhedra.
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