4.5 Article

Grain Size and Texture of Cu2ZnSnS4 Thin Films Synthesized by Cosputtering Binary Sulfides and Annealing: Effects of Processing Conditions and Sodium

Journal

JOURNAL OF ELECTRONIC MATERIALS
Volume 40, Issue 11, Pages 2214-2221

Publisher

SPRINGER
DOI: 10.1007/s11664-011-1729-3

Keywords

Cu2ZnSnS4; copper zinc tin sulfide; thin-film solar cell; grain boundaries; grain growth; earth-abundant photovoltaic materials; chalcopyrite; sodium; kesterite

Funding

  1. U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-SC0001630]
  2. U.S. Department of Energy (DOE) [DE-SC0001630] Funding Source: U.S. Department of Energy (DOE)

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We investigate the synthesis of kesterite Cu2ZnSnS4 (CZTS) polycrystalline thin films using cosputtering from binary sulfide targets followed by annealing in sulfur vapor at 500A degrees C to 650A degrees C. The films are the kesterite CZTS phase as indicated by x-ray diffraction, Raman scattering, and optical absorption measurements. The films exhibit (112) fiber texture and preferred low-angle and I 3 pound grain boundary populations which have been demonstrated to reduce recombination in Cu(In,Ga)Se-2 and CdTe films. The grain growth kinetics are investigated as functions of temperature and the addition of Na. Significantly, lateral grain sizes above 1 mu m are demonstrated for samples grown on Na-free glass, demonstrating the feasibility for CZTS growth on substrates other than soda lime glass.

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