Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 40, Issue 5, Pages 513-517Publisher
SPRINGER
DOI: 10.1007/s11664-010-1416-9
Keywords
Thermoelectrics; III-nitrides; Seebeck; GaN; InGaN; GaN:Gd; MOCVD; thermopower
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Funding
- EPIC
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III-nitride InGaN-based solar cells have gained importance because their band gap can potentially cover most of the solar spectrum, spanning 0.7 eV to 3.4 eV. However, to use these materials to harvest additional energy, other properties such as their thermoelectric properties should be exploited. In this work, the Seebeck coefficient and the electrical conductivity of three InGaN alloys with various indium concentrations and Gd-doped GaN (GaN:Gd) were measured, and the power factor was calculated. We report a Seebeck value of similar to 209 mu V/K for Gd-doped GaN.
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