Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 39, Issue 9, Pages 1920-1925Publisher
SPRINGER
DOI: 10.1007/s11664-009-1047-1
Keywords
Pulsed laser deposition (PLD); bismuth telluride (Bi-Te); thermoelectric energy harvesters
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This article reports on the development of thin films of p- and n-type bismuth telluride compounds which are suitable for microelectromechanical systems (MEMS) thermoelectric energy harvesters. Films were prepared by the pulsed laser deposition technique. It is shown that the thin films of binary Bi-Te alloys outperformed considerably their ternary counterparts. Furthermore, the highest thermoelectric figure of merit (ZT) was found to be 0.39 for the p-type Bi32Te68 alloy, whereas the optimal n-type alloy was Bi25Te75, which was characterized by a relatively low stress gradient.
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