Thermoelectric Properties of a 593-nm Individual Bismuth Nanowire Prepared Using a Quartz Template

An individual bismuth nanowire sample, 593 nm in diameter and 1.64 mm in length, has been successfully grown using a quartz template. The resistivity and the Seebeck coefficient of the nanowire at 300 K were 1.35 mu Omega m and -59 mu V/K, respectively, similar to those of a bismuth bulk sample. The temperature dependence of the resistivity was found to decrease with temperature from 300 K to 175 K and then increase with further temperature reduction below 175 K. The absolute value of the Seebeck coefficient decreased with temperature from 300 K to 90 K, and the sign of the Seebeck coefficient changed from negative to positive near 90 K. This result indicated that there was a small amount of contamination in the bismuth. The carrier density was estimated from the resistivity and Seebeck coefficient on the basis of limitation of the mean free path and a two-carrier model, and the observed temperature dependences are discussed.