Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 37, Issue 9, Pages 1261-1273Publisher
SPRINGER
DOI: 10.1007/s11664-008-0459-7
Keywords
HgCdTe; APD; bandwidth BW; impulse response time; Silvaco simulation; LPE; MBE
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The response time of front-sided illuminated n-on-p Hg(0.7)Cd(0.3)Te electron avalanche photodiodes (e-APDs) at T = 77 K was studied using impulse response measurements at lambda = 1.55 mu m. We measured typical rise and fall times of 50 ps and 800 ps, respectively, at gains of M approximate to 100, and a record gain-bandwidth (GBW) product of GBW = 1.1 THz at M = 2800. Experiments as a function of the collection width have shown that the fall time is strongly limited by diffusion. Variable-gain measurements showed that the impulse response is first-order sensitive to the level of the output amplitude. Only a slight increase in the rise time and the fall time was observed with the gain at constant output amplitude, which is consistent with a strongly dominant electron multiplication. Comparisons of the experimental results with Silvaco finite element simulations confirmed the diffusion limitation of the response time and allowed the illustration of the transit time and RC effects.
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