Journal
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
Volume 184, Issue 8-10, Pages 517-524Publisher
ELSEVIER
DOI: 10.1016/j.elspec.2011.09.001
Keywords
Strongly correlated materials; ARPES; Hard X-ray photoemission; UPd3; UGe2; USb2
Categories
Funding
- US DOE, BES, Division of Materials Science
- LANL LDRD
- NSF [DMR-o537588]
- Polish grant [N202 140 32/3877]
Ask authors/readers for more resources
Electronic structure of single crystal UPd3, UGe2, and USb2 has been measured from hard X-ray photoelectron spectroscopy (HAXPES) with 7.6 keV photons at the European Synchrotron Radiation Facility (ESRF). Lower photon energy angle-resolved photoelectron spectroscopy (ARPES) was also performed at the Synchrotron Radiation Center (SRC). Herein the following results are presented: (1) ARPES results demonstrate hybridization between the U 5f and Pd 4d electrons within UPd3. (ii) The greatly reduced surface sensitivity of HAXPES enabled observation of the bulk core levels in spite of surface oxidation. Photoelectron mean-free-path versus oxide layer thickness considerations were used to model the effectiveness of HAXPES for probing bulk features of in-air cleaved samples. (iii) Two distinct features separated by 800 meV were observed for the Sd 3d core level. These two features are attributed to manifestations of two distinct Sb sites within the USb2 single crystal as supported by consideration of interatomic distances and enthalpy-of-formation. (iv) Doniach-Sunjic line shape analysis of core level spectral features revealed correlations between asymmetry coefficients and 5f localization. (C) 2011 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available