4.1 Article

The interaction of Xe and Xe plus K with graphene

Journal

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/j.elspec.2010.05.003

Keywords

Graphene; Doped graphene; Epitaxial graphene; Rare-gas adsorption

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Funding

  1. Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy [DE-AC02-05CH11231]

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We have investigated the electronic properties of monolayer graphene with adsorbed layers of xenon or potassium, or a combination of the two. The formation of the first Xe layer is characterized by a dipole polarization which is quenched by a second Xe layer. By comparing K on Xe on graphene to K on bare graphene, we determine the K contribution to trigonal warping and mass renormalization due to electron-phonon coupling. The former is found to be small but significant, while the latter is shown to be negligible. Thus, previously determined values of electron-phonon coupling for K on graphene are shown to be intrinsic to doped graphene and not determined by the proximity of K ions to the graphene. Published by Elsevier B.V.

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