4.1 Article

Observation of charge transfer states of F4-TCNQ on the 2-methylpropene chemisorbed Si(100)(2 x 1) surface

Journal

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/j.elspec.2009.04.006

Keywords

Charge transfer; Acceptor; Photoelectron spectroscopy; Si surface; Work function

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Funding

  1. Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan

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We have investigated the valence electronic states of 2,3,5.6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F-4-TCNQ) on the 2-methylpropene chemisorbed Si(1 0 0)(2 x 1) surface using valence photoelectron spectroscopy. Since the electron affinity of condensed F-4-TCNQ is 5.24 eV and the energy from the valence band maximum of the 2-methylpropene saturated Si(1 0 0)(2 x 1) surface to the vacuum level is 4.1 eV, spontaneous charge transfer would be expected in the present system. At sub-monolayer coverage of F-4-TCNQ, characteristic peaks are observed at 1.1 and 2.5 eV below Fermi energy. The former peak is assigned to a singly occupied affinity level, and the latter is ascribed to a relaxed highest occupied molecular orbital of adsorbed F-4-TCNQ The work function change is increased Lip to +13 eV as a function of F-4-TCNQ coverage. These results support the occurrence of charge transfer into F-4-TCNQ on the 2-methylpropene saturated Si(1 0 0)(2 x 1) surface. (C) 2009 Elsevier B.V. All rights reserved.

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