Journal
JOURNAL OF DISPLAY TECHNOLOGY
Volume 10, Issue 11, Pages 917-927Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JDT.2013.2292580
Keywords
Oxygen vacancies; persistent photoconductivity; thin-film transistors (TFTs); transparent oxide semiconductors
Funding
- Royal Society Wolfson Research Award
- EU-FP7 Project [ORAMA CP-IP 246334-2]
- EPSRC [EP/K03099X/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/K03099X/1] Funding Source: researchfish
- National Research Foundation of Korea [22A20130012279] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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This paper reviews the mechanisms underlying visible light detection based on phototransistors fabricated using amorphous oxide semiconductor technology. Although this family of materials is perceived to be optically transparent, the presence of oxygen deficiency defects, such as vacancies, located at subgap states, and their ionization under illumination, gives rise to absorption of blue and green photons. At higher energies, we have the usual band-to-band absorption. In particular, the oxygen defects remain ionized even after illumination ceases, leading to persistent photoconductivity, which can limit the frame-rate of active matrix imaging arrays. However, the persistence in photoconductivity can be overcome through deployment of a gate pulsing scheme enabling realistic frame rates for advanced applications such as sensor-embedded display for touch-free interaction.
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