Journal
JOURNAL OF DISPLAY TECHNOLOGY
Volume 9, Issue 11, Pages 883-889Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JDT.2013.2256878
Keywords
Amorphous oxide semiconductors (AOS); physically-based compact modeling; sub-threshold characteristics; thin film transistors (TFTs)
Funding
- Royal Society Wolfson Research Award
- EU-FP7 [ORAMA CP-IP246334-2]
- Engineering and Physical Sciences Research Council [EP/K03099X/1] Funding Source: researchfish
- EPSRC [EP/K03099X/1] Funding Source: UKRI
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In this paper, we present a physically-based compact model for the sub-threshold behavior in a TFT with an amorphous semiconductor channel. Both drift and diffusion current components are considered and combined using an harmonic average. Here, the diffusion component describes the exponential current behavior due to interfacial deep states, while the drift component is associated with presence of localized deep states formed by dangling bonds broken from weak bonds in the bulk and follows a power law. The proposed model yields good agreement with measured results.
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