Semipolar (20(2)over-bar(1)over-bar) InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

This work examines the effects of polarization-related electric fields on the energy band diagrams, wavelength shift, wave function overlap, and efficiency droop for InGaN quantum wells on various crystal orientations, including polar (0001) (c-plane), semipolar (20 (2) over bar1), semipolar (20 (2) over bar(1) over bar), and non-polar (10 (1) over bar0) (m-plane). Based on simulations, we show that the semipolar (20 (2) over bar(1) over bar) orientation exhibits excellent potential for the development of high-efficiency, low-droop light-emitting diodes (LEDs). We then present recent advancements in crystal growth, optical performance, and thermal performance of semipolar (20 (2) over bar(1) over bar) LEDs. Finally, we demonstrate a low-droop, high-efficiency single-quantum-well blue semipolar (20 (2) over bar(1) over bar) LED with an external quantum efficiency of more than 50% at 100 A/cm(2).