Journal
JOURNAL OF DISPLAY TECHNOLOGY
Volume 9, Issue 5, Pages 324-332Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JDT.2013.2246541
Keywords
III-Nitride; light-emitting diodes; light extraction efficiency; refractive index matching; TiO2 microspheres
Funding
- U.S. Department of Energy [NETL, DE-PS26-08NT00290]
- National Science Foundation [ECCS 1028490, CBET 0828426]
- Class of 1961 Professorship Fund
- Directorate For Engineering
- Div Of Chem, Bioeng, Env, & Transp Sys [1120399] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1028490] Funding Source: National Science Foundation
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The enhancement of light extraction efficiency of InGaN quantum well light emitting diodes (LEDs) was achieved by employing the refractive index matched TiO2 microsphere arrays. The optimization studies of the dipping method and rapid convective deposition (RCD) method were carried out for the deposition of TiO2 microsphere arrays onto LEDs. The two-dimensional (2D) close-packed TiO2 microsphere arrays were deposited by the using optimized conditions of the dipping and RCD methods, respectively. The light extraction efficiencies of LEDs under electrical injection were enhanced by 1.8-1.9 times by utilizing 520-nm diameter amorphous and anatase TiO2 microspheres via the two deposition methods.
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