Journal
JOURNAL OF DISPLAY TECHNOLOGY
Volume 9, Issue 4, Pages 272-279Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JDT.2013.2248342
Keywords
Auger recombination; band parameters; band structure; dilute-As GaNAs; First-Principle; lasers; light-emitting diodes
Funding
- U.S. National Science Foundation [ECCS-1028490, DMR-0907260]
- Class of 1961 Professorship Fund
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1028490] Funding Source: National Science Foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0907260] Funding Source: National Science Foundation
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The band structure of dilute-As GaNAs alloy with the As composition range from 0% to 12.5% is studied by using First-Principle density-functional calculation. Our analysis shows that the dilute-As GaNAs alloy exhibits the direct band gap properties. The dilute-As GaNAs alloy shows a band gap range from 3.645 eV down to 2.232 eV with As content varying from 0% to 12.5%, which covers the blue and green spectral regime. This finding indicates the alloy as a potential candidate for photonic devices applications. The bowing parameter of 14.5 eV +/- 0.5 eV is also obtained using line fitting with the First-Principle and experimental data. The effective masses for electrons and holes in dilute-As GaNAs alloy, as well as the split-off energy parameters, were also presented. Minimal interband Auger recombination is also suggested for the dilute-As GaNAs alloy attributing to the off-resonance condition for this process.
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