Journal
JOURNAL OF DISPLAY TECHNOLOGY
Volume 9, Issue 9, Pages 729-734Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JDT.2012.2227298
Keywords
Amorphous oxides; pH sensors; ISFET; Ta2O5 sensing layer; sputtering
Funding
- Portuguese Science and Technology Foundation (FCT) [Bloodfet PTDC/SAU-BEB/098125/2008, PEst-C/CTM/LA0025/2011]
- FCT-MCTES [SFRH/BPD/44874/2008]
- INL, International Iberian Nanotechnology Laboratory
- Fundação para a Ciência e a Tecnologia [SFRH/BPD/44874/2008] Funding Source: FCT
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We present the results obtained with an extended-gate ISFET totally based on amorphous oxides (GIZO as the semiconductor, Ta2O5: SiO2 as the dielectric and Ta2O5 as the sensitive layer). A full characterization of the device was performed with constant ionic strength pH buffer solutions, revealing a sensitivity of 40 mV/pH with small hysteresis, and good linearity in the pH 4-pH 10 range buffer solutions. These results clearly show that it is possible to produce room-temperature disposable and low cost bio-sensors.
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