150 degrees C Amorphous Silicon Thin Film Transistors With Low-Stress Nitride on Transparent Plastic

This paper reports on hydrogenated amorphous silicon (a-Si: H) thin-film transistors (TFTs) processed at 150 degrees C using plasma-enhanced chemical vapor deposition on polyethylene naphthalate (PEN) transparent plastic substrates. We examine the impact of RF deposition power on film stress of amorphous silicon nitride (a-SiN(x):H), and resulting TFT performance. Transistors with the lowest stress nitride, yield the best performance in terms of device mobility (similar to 1.1 cm(2)/V . s), ON/OFF current ratio (similar to 10(10)), and gate leakage current (0.1 pA). Stable TFTs are demonstrated with a threshold voltage shift of less than 0.8 V following 10 hours of DC bias stress at 10 V.