Journal
JOURNAL OF CRYSTAL GROWTH
Volume 401, Issue -, Pages 330-333Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2013.12.061
Keywords
Characterization; Phonon; Polarized Raman; Floating zone technique; Edge defined film fed growth; Oxides; Semiconducting gallium compounds
Funding
- MEXT, Japan [25390071, 25420341, 25706020]
- Grants-in-Aid for Scientific Research [25706020, 25420341, 25289093] Funding Source: KAKEN
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Polarized Raman spectra were measured from (010) Mg-doped, (100) Si-doped, and (001) unintentionally doped beta-Ga2O3 substrates prepared by either the floating zone growth or edge-defined film-fed growth methods. The A(g) and B-g Raman active modes were perfectly separated in the spectra according to the polarization selection rules. To the best of our knowledge, this is the first experimental observation of a complete set of polarized Raman spectra of beta-Ga2O3. The results are ensured by the high uniformity of crystalline orientation and surface flatness of the present substrates. (C) 2014 Elsevier B.V. All rights reserved.
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