The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy

We present a study on the growth of InAs1-xSbx alloy nanowires directly on Si (111) substrates via a self seeded mechanism for the first time. Through varying group V flow rate ratios, InAs1-xSbx nanowires with x = from 0 to 0.43 are obtained. It is found that Sb content has a significant effect on the morphology and crystal quality of the formed InAs1-xSbx nanowires. Furthermore, the axial and radial growth rates of the nanowires change in opposite trends with increasing group V flow rate ratio. This indicates that the growth rate of InAs1-xSbx nanowires is ultimately determined by Sb compositions of the nanowires. In addition, the scanning electron microscopy and transmission electron microscopy measurements reveal that the dimensional uniformity and crystal quality of lnAsSb nanovvires with a small amount of Sb compositions are greatly improved compared to the reference lnAs nanovvires. The effect mechanism of Sb on the growth of InAs1-xSbx nanovvires is clarified, which will be a guide for making high quality IRAs' Sb, nanovvires and relevant helerosiruclure devices in the future. (C) 2014 Elsevier B.V. All rights reserved,