Journal
JOURNAL OF CRYSTAL GROWTH
Volume 402, Issue -, Pages 15-21Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2014.04.004
Keywords
Diffusion; Te inclusions; Cadmium compounds; CdZnTe; Radiation detectors
Funding
- National Natural Science Foundations of China [51202197]
- National Basic Research Program of China [2011CB610406]
- 111 Project of China [B08040]
- Specialized Research Fund for the Doctoral Program of Higher Education of China [20116102120014]
- Research Fund of the State Key Laboratory of Solidification Processing (NWPU), China
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The migration of Te inclusions in CdZnTe single crystals has been investigated under temperature gradient fields in saturated Cd/Zn vapor. The migration velocity of Te inclusion upwards temperature gradient is calculated in consideration of the ordinary and thermal diffusion during annealing. The critical annealing conditions for eliminating Te inclusions are supposed based on the calculations. However, the necessary annealing conditions (annealing temperature and time) are always much larger than the suggested ones. The obtained annealing results can be summarized into three categories based on the elimination efficiency eta of Te inclusions. Excluding the influence of insufficient annealing conditions, eta always tends to be larger than 70% but with a restricted average value around 85%. Further discussions indicate that the interface kinetics, such as the size and void effects, have great influence on eta and the migration behaviors of Te inclusions. The size effect likely results in longer annealing time, while the void effect leads to the density of Te inclusions (or voids) with diameter of 5-25 mu m increase after long-time annealing. (C) 2014 Elsevier B.V. All rights reserved.
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