Journal
JOURNAL OF CRYSTAL GROWTH
Volume 404, Issue -, Pages 136-139Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2014.07.016
Keywords
Characterization; Growth front solutions; Chemical vapor deposition processes; Perovskites; Dielectric materials; Filters
Funding
- Key Project of National Natural Science Foundation of China (NSFC) [11032010]
- NSFC [61274107, 61176093, 11275163]
- 973 Program [2012CB326404]
- Key Project of Hunan Provincial NSFC [13JJ2023]
- Key Project of Scientific Research Fund of Hunan Provincial Education Department [12A129]
- Hunan Provincial Innovation Foundation for Postgraduate [CX2013B257, CX2013B261]
- Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory [ZHD201304]
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Thin films of ferroelectric Pb0.82La0.82Sr0.1Ti0.98O3 (PLST) thin films were fabricated on LaNiO3 buffered Pt/Ti/SiO2/Si substrates via the sol-gel deposition method. The dielectric and tunable properties were investigated as a function of DC bias and frequency to exhibit effect of LNO buffer layer on the tunable dielectric thin film. It shows that PLST thin film deposited on LNO/Pt/Ti/SiO2/Si substrates possesses higher dielectric constant and lower dielectric loss compared with the one directly deposited on Pt/Ti/SiO2/Si substrates. Furthermore, the tunability of the LNO-buffered PLST thin film is 68% at the DC bias of 20 V, which is higher than 60% of the pure PLST thin film. The results suggest the addition of LNO buffer layer could effectively improve the dielectric and tunable properties of PLST thin film and make it suitable for high quality dielectric tunable devices. (C) 2014 Published by Elsevier B.V.
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