Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy

We investigated the growth temperature dependence of the structural and electrical properties of Sn-doped Ca2O3 homoepitaxial films grown on single crystal beta-Ga2O3 (010) substrates by molecular beam epitaxy. Ca2O3 films with an atomically smooth surface were obtained at growth temperatures of 550-650 degrees C. On the other hand, a delay in the incorporation of Sn atoms in Ca2O3, which was probably due to segregation, occurred in the initial stage of growth at higher than 600 degrees C. To ensure that Sn-doped Ca2O3 films with both high crystal quality and accurately controlled carrier density are obtained, the optimum growth temperature should be set at 540-570 degrees C. (c) 2014 Elsevier EN. All rights reserved