Journal
JOURNAL OF CRYSTAL GROWTH
Volume 390, Issue -, Pages 24-29Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2013.12.033
Keywords
Chloride-based; Al CVD; BL Methane; Silicon carbide; SiC
Funding
- Knut and Alice Wallenberg foundation
- Foundation for Strategic Research (SSF)
- Swedish Research Council
Ask authors/readers for more resources
It is generally considered that methane is not a suitable carbon precursor for growth of silicon carbide (SiC) epitaxial layers by Chemical Vapor Deposition (CVD) since its use renders epitaxial layers with very high surface roughness. In this work we demonstrate that in fact SiC epitaxial layers with high-quality morphology can be grown using methane. It is shown that a key factor in obtaining high-quality material is tuning the C/Si ratio of the process gas mixture to a region where the growth is limited neither by carbon nor by silicon supplies. From the growth characteristics presented here, we argue that the reactivity of methane with the SiC surface is much higher than generally assumed in SiC CVD modeling today. (C) 2013 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available