Journal
JOURNAL OF CRYSTAL GROWTH
Volume 386, Issue -, Pages 76-79Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2013.09.023
Keywords
Crystal structure; Metalorganic chemical vapor deposition; Nitrides; Semiconducting aluminum compounds
Ask authors/readers for more resources
We report on the polarity control of the crystal polarity of AlN layers grown on sapphire substrates by oxygen doping during AlN nucleation. Oxygen concentration amongst AlN nuclei as well as the resulting impact on surface morphology and crystalline quality was investigated using isotopic oxygen as a dopant. We observed that the density of AlN nuclei increased with increasing oxygen concentration, and that AlN films with Al-polar can be obtained with an oxygen concentration of over 10(21) cm(-3) in the AlN nucleation layer. The results agree well with the surface morphologies and (10 (1) over bar2) full width at half maximum values of the X-ray omega-rocking curve of AlN overgrowth layers, indicating that the proposed method with the optimized oxygen concentration can be used to control the polarity and obtain AlN films with a smooth surface and good crystalline quality. (C) 2013 Elsevier B.V. All rights reserved
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available