Journal
JOURNAL OF CRYSTAL GROWTH
Volume 380, Issue -, Pages 55-60Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2013.05.037
Keywords
Crystal morphology; CVD; Chloride-based; SiC
Funding
- Swedish Energy Agency
- Swedish Research Council (VR)
- Swedish Foundation for Strategic Research (SSF)
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The development of a chemical vapor deposition (CVD) process for very thick silicon carbide (SiC) epitaxial layers suitable for high power devices is demonstrated by epitaxial growth of 200 nm thick, low doped 4H-SiC layers with excellent morphology at growth rates exceeding 100 nm/h. The process development was done in a hot wall CVD reactor without rotation using both SiCl4 and SiH4+HCl precursor approaches to chloride based growth chemistry. A C/Si ratio <1 and an optimized in-situ etch are shown to be the key parameters to achieve 200 nm thick, low doped epitaxial layers with excellent morphology. (C) 2013 Elsevier B.V. All rights reserved.
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