Journal
JOURNAL OF CRYSTAL GROWTH
Volume 372, Issue -, Pages 175-179Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2013.03.038
Keywords
Defects; CdZnTe single crystal growth; Zinc compounds; Semiconducting II-VI materials
Funding
- National Nature Science Foundation [51172187]
- SPDRF [20116102130002]
- Doctoral Fund of Ministry of Education of China [20116102120016]
- 111 Program of MOE [B08040]
- Xi'an Science and Technology Foundation [CX1261-2, CX1261-3]
- China Postdoctoral Science Foundation [20100481360]
- Natural Science Foundation of Shaanxi Province [2011JM6016]
- Shaanxi Province Foundation for Returned Scholars
- High-level start-up Funding of NWPU
- Fundamental Research Foundation of NWPU, China [NPU-FFR-JC201232]
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CdZnTe (CZT) single crystal was grown by a modified vertical Bridgman method. It was used to study the electrical conduction behavior of CZT crystal by impedance spectroscopy in the temperature range over 303-573 K. The imaginary part vs real part of complex impedance plots was considered to be a semicircle indicating only bulk contributions. The value of activation energy derived from the peak of the imaginary part of electrical impedance was found to be 0.08 +/- 0.005 eV, which was assigned to relate the migration and hopping of ionized Cd vacancies and Te antisites. The discrepancy between activation energy of dc electrical conductivity (0.35 +/- 0.03 eV) and the activation energy (0.20 +/- 0.04 eV) of hopping rates was attributed to the high ion hopping rates and low attempt frequencies. The mechanism of electrical conduction was mainly ascribed to a short range migration or hopping of charge carriers including ionized Cd vacancies and Te antisites in the CZT crystal system. (C) 2013 Elsevier B.V. All rights reserved.
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