Journal
JOURNAL OF CRYSTAL GROWTH
Volume 377, Issue -, Pages 147-152Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2013.05.012
Keywords
Solidification; Segregation; Melt zone growth; Single crystal growth; Germanium silicon alloys; Semiconducting silicon alloys
Funding
- Canadian Space Agency
- Atlantic Canada Opportunities Agency
- Dalhousie University
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Melt zone growth of Ge-rich SiGe alloy was performed on 24 mm diameter by > 90 mm long feedrods using a resistive furnace. The Si composition along the growth axis of one sample showed a trend where the composition first rapidly decreased, then smoothly transitioned into a plateau-like region, and finally dropped in a Bridgman-like manner near the end of processing. A simple one-dimensional model including full mixing of the melt constituents and an equilibrium Si segregation coefficient given by the phase diagram of SiGe was used to explain the results. The model is in good agreement with the Si composition profile along the growth axis. (c) 2013 Elsevier B.V. All rights reserved.
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