Journal
JOURNAL OF CRYSTAL GROWTH
Volume 370, Issue -, Pages 342-347Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2012.07.024
Keywords
Doping; Metalorganic vapor phase epitaxy; Semiconducting II-VI materials; Semiconducting ternary compounds
Funding
- Ministry of Education, Culture, Sports, Science and Technology of Japan [22560299]
- Grants-in-Aid for Scientific Research [24760258, 22560299, 25420291] Funding Source: KAKEN
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Post-annealing treatment in nitrogen gas flow has been carried out for P-doped Zna(1 - x)M(x) Te layer grown under a Te-rich or Te-poor condition by metalorganic vapor phase epitaxy. The electrical and photoluminescence properties of P-doped Zn1 - xMgxTe layers are altered by annealing treatment. The post-annealing is very effective in obtaining p-type conductive Zn1 - xMgx,Te for the layer grown under a Te-poor condition. On the other hand, Zn1 - xMgxTe layer is characterized by a high compensation ratio and DAP luminescence for the layer grown under a Te-rich condition, even after annealing treatment. Similar tendencies are also found in P-doped ZnTe layers. (c) 2012 Elsevier B.V. All rights reserved.
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